Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design

Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design

Blog Article

Emerging new communication standards like 5G or 6G aggravate the circuit design of radio-frequency generation systems as they constantly increase demand on high bandwidths, low latency, and high spectral purity.The utilization of high- $Q $ oscillators, however, provides a possibility of optimisation of radio-frequency oscillators regarding their phase-noise performance in the overall system.This paper analyses one of the most promising electromechanical dynavap o rings resonator devices, the resonant fin transistor with respect to its performance and application in oscillator circuit design.Several investigations regarding its working principle, design trade-offs and limits are carried out in this work.An oscillator nightstick twm-850xl circuit design is given for two variants of the resonant fin transistor device together with an outlook on its performance compared to other state-of-the-art radio-frequency oscillator designs.

Following the performance analyses conducted throughout this work, the fundamental limit for the $Q$ -factor of this resonator is investigated, challenging the validity of functionality of the resonant fin transistor and its potential for circuit applications.